LMG2100R026
Features
- Integrated half-bridge Ga N FETs and driver
- 93V continuous, 100V pulsed voltage rating
- Package optimized for easy PCB layout
- High slew rate switching with low ringing
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- Gate driver capable of up to 10MHz switching
- Excellent propagation delay (33ns typical) and matching (2ns typical)
- Internal bootstrap supply voltage clamping to prevent Ga N FET overdrive
- Supply rail undervoltage for lockout protection
- Low power consumption
- Exposed top QFN package for top-side cooling
- Large GND pad for bottom-side cooling
2 Applications
- Buck, boost, buck-boost converters
- LLC converters
- Solar inverters
- Tele and server power
- Motor drives
- Power tools
- Class-D audio amplifiers
3 Description
The LMG2100R026 device is a 93V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (Ga N) FETs. The device consists of two Ga N FETs driven...
