LMG2100R026 Datasheet (100V 53A GaN Half-Bridge Power Stage)

Part: LMG2100R026
Manufacturer: Texas Instruments (official site)
Size: 2.56 MB

LMG2100R026 Key Features

Integrated half-bridge GaN FETs and driver
93V continuous, 100V pulsed voltage rating
Package optimized for easy PCB layout
High slew rate switching with low ringing
5V external bias power supply
Supports 3.3V and 5V input logic levels
Gate driver capable of up to 10MHz switching
Excellent propagation delay (33ns typical) and
Supply rail undervoltage for lockout protection
Low power consumption

Related Texas Instruments Datasheets

Part Number	Description
LMG2100R044	35A GaN Half-Bridge Power Stage
LMG2610	Integrated 650-V GaN Half Bridge
LMG2650	GaN power-FET half bridge
LMG1020	Low-Side GaN and MOSFET Driver
LMG1025-Q1	Automotive Low Side GaN and MOSFET Driver

LMG2100R026 Description

The LMG2100R026 device is a 93V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output...