LMG3526R030 Description
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA pared to discrete silicon gate drivers.
LMG3526R030 Key Features
- 650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2MHz switching frequency
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature
- Advanced power management