LMG5200 Description
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input...
LMG5200 Key Features
- 1 Integrated 15-mΩ GaN FETs and Driver
- 80-V Continuous, 100-V Pulsed Voltage Rating
- Package Optimized for Easy PCB Layout
- Very Low mon Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Top
- Ideal for Isolated and Non-Isolated
LMG5200 Applications
- Gate Driver Capable of Up to 10 MHz Switching
- Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
- Supply Rail Undervoltage Lockout Protection