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LMG5200 - 10-A GaN Half-Bridge Power Stage

General Description

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs.

The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

Key Features

  • 1 Integrated 15-mΩ GaN FETs and Driver.
  • 80-V Continuous, 100-V Pulsed Voltage Rating.
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements.
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies.
  • Ideal for Isolated and Non-Isolated.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design LMG5200 SNOSCY4E – MARCH 2015 – REVISED OCTOBER 2018 LMG5200 80-V, 10-A GaN Half-Bridge Power Stage 1 Features •1 Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies • Ideal for Isolated and Non-Isolated Applications • Gate Driver Capable of Up to 10 MHz Switching • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive • Supply Rail Undervoltage Lockout Protection • Excellent Propagation Delay (29.