ONET8511T Datasheet | Texas Instruments

FEATURES - 8 GHz Bandwidth - 5.5 kΩ Differential Small Signal Transimpedance - Automatic Gain Control (AGC) - 5% THD Typical with 100 MHz Input - 10 p A/√Hz Typical Input Referred Noise - 2 m AP-P Input Current Linear Operation - Received Signal Strength Indication (RSSI) - CML Data Outputs With On-Chip 50 Ω Back-Termination - On Chip Supply Filter Capacitor - Single 3.3 V Supply - Die Size: 945 × 1200 µm - Case temperature operation: - 25°C to 100°C APPLICATIONS - 10 Gigabit Ethernet LRM Optical Receivers - SFP+ Optical Receivers - 8×and 10× Fibre Channel Optical Receivers - SONET OC-192 - PIN Preamplifier-Receivers DESCRIPTION The ONET8511T is a high-speed, high linearity transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low input referred noise, 8 GHz bandwidth, 5.5 kΩ small signal transimpedance, automatic gain control (AGC) which provides highly linear operation and a received signal strength indicator (RSSI). The ONET8511T is available in die form, includes an on-chip VCC bypass capacitor and is optimized for packaging in a TO can and for the use together with electronic dispersion pensation (EDC) ICs. The ONET8511T requires a single +3.3 V supply and its power efficient design typically dissipates less than 160 m W. The device is characterized for operation from -25°C to 100°C (IC back side) temperature.. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008, Texas Instruments Incorporated SLLS895 - MARCH 2008 .ti. These devices have limited built-in ESD protection. The leads...