ONET8521T Datasheet | Texas Instruments

FEATURES - 9 GHz Bandwidth - 2.4 kΩ Differential Small Signal Transimpedance - -20d Bm Sensitivity - 0.95 µARMS Input Referred Noise - 2.5 m APP Input Overload Current - Received Signal Strength Indication (RSSI) - 90 m W Typical Power Dissipation - CML Data Outputs with On-Chip 50Ω Back-Termination - On Chip Supply Filter Capacitor - Single 3.3 V Supply - Die Size: 870 µm × 1036 μm APPLICATIONS - 10G Ethernet - 8G and 10G Fibre Channel - 10G EPON - SONET OC-192 - 6G CPRI and OBSAI - PIN Preamplifier Receivers - APD Preamplifier Receivers DESCRIPTION The ONET8521T is a high-speed, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3Gbps. It features low input referred noise, 9GHz bandwidth, 2.4kΩ small signal transimpedance, and a received signal strength indicator (RSSI). The ONET8521T is available in die form, includes an on-chip VCC bypass capacitor and is optimized for packaging in a TO can. The ONET8521T requires a single 3.3V ±10% supply and its power efficient design typically dissipates less than 90m W. The device is characterized for operation from - 40°C to 100°C case (IC back side) temperature. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011, Texas Instruments Incorporated SLLSE87A - JULY 2011 - REVISED AUGUST 2011 .ti. This integrated circuit can be damaged by ESD. Texas Instruments remends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance...