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D State-of-the-Art EPIC-ΙΙB BiCMOS Design
Significantly Reduces Power Dissipation
D Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
D ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
D Typical VOLP (Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
D High-Drive Outputs (−32-mA IOH, 64-mA IOL) D Package Options Include Plastic
Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Plastic (N) and Ceramic (J) DIPs, and Ceramic Flat (W) Package
SN54ABT244, SN74ABT244A OCTAL BUFFERS/DRIVERS WITH 3ĆSTATE OUTPUTS
SCBS099J − JANUARY 1991 − REVISED APRIL 2005
SN54ABT244 . . . J OR W PACKAGE SN74ABT244A . . .
SN54ABT244 Datasheet
