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SN54AC00-SP - Quad 2 Input NAND Gate

General Description

The SN54AC00 device contains four independent 2input NAND gates.

B or Y = A + B in positive logic.

Key Features

  • 5962R87549:.
  • Radiation hardness assurance (RHA) up to TID 100 krad (Si).
  • SEL immune to 86 MeV×cm2/mg.
  • 5962-87549:.
  • Total ionizing dose 50 krad (Si).
  • 2 V to 6 V VCC operation.
  • Inputs accept voltages to 6 V.
  • Maximum tpd of 7 ns at 5 V 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SN54AC00-SP SCHS367C – OCTOBER 2008 – REVISED APRIL 2022 SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate 1 Features • 5962R87549: – Radiation hardness assurance (RHA) up to TID 100 krad (Si) – SEL immune to 86 MeV×cm2/mg • 5962-87549: – Total ionizing dose 50 krad (Si) • 2 V to 6 V VCC operation • Inputs accept voltages to 6 V • Maximum tpd of 7 ns at 5 V 2 Applications • Satellite payloads • Satellite power on reset logic • RHA known good Die (KGD) offering for space hybrids Pin Functions (Each Gate) INPUTS A B OUTPUT Y H H L L X H X L H A Y B Logic Diagram (Positive Logic) 3 Description The SN54AC00 device contains four independent 2input NAND gates. Each gate performs the Boolean function of Y = A • B or Y = A + B in positive logic.