SN64BCT306 Datasheet | Texas Instruments

- State-of-the-Art BiCMOS Design Significantly Reduces ICCZ - ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) - High-Impedance State During Power Up and Power Down - 3-State True Outputs Drive Bus Lines or Buffer-Memory Address Registers - P-N-P Inputs Reduce DC Loading - Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (P) SN64BCT306 DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SCBS048B - MARCH 1990 - REVISED NOVEMBER 1993 D OR P PACKAGE (TOP VIEW) 1OE VCC 2OE 2A 1 2 3 4 8 2Y 7 1A 6 GND 5 1Y description This dual buffer and line driver is designed specifically to improve both...