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SN7489 Datasheet 64-BIT RANDOM-ACCESS READ/WRITE MEMORY

Manufacturer: Texas Instruments

General Description

This 64-bit active-element memory is a monolithic, high-speed, transistor-transistor logic (TTL) array of 64 flip-flop memory cells organized in a matrix to provide 16 words of four bits each.

Each of the 16 words is addressed in straight binary with full on-chip decoding.

The buffered memory inputs consist of four address lines, four data inputs, a write enable, and a memory enable for controlling the entry and access of data.

Overview

SN7489 64-BIT RANDOM-ACCESS READ/WRITE MEMORY • For Application as a"Scratch Pad" Memory with Nondestructive Read-Out • Fully Decoded Memory Organized as 16 Words of Four Bits Each • Fast Access Time .

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