Texas Instruments SN74ALS232B
The SN74ALS232B is characterized for operation from 0°C to 70°C.SN74ALS232B 16 × 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY D Independent Asynchronous Inputs and Outputs D 16 Words by 4 Bits D Data Rates up to 40 MHz D Fall-Through Time 14 ns Typical D 3-State Outputs D Package Options Include Plastic Small-Outline Package (DW), Plastic Chip Carriers (FN), and Standard Plastic 300-mil DIPs (N) SCAS251B – FEBRUARY 1989 – REVISED APRIL 1998 DW OR N PACKAGE (TOP VIEW) OE 1 FULL 2 LDCK 3 D0 4 D1 5 D2 6 D3 7 GND 8 16 VCC 15 UNCK 14 EMPTY 13 Q0 12 Q1 11 Q2 10 Q3 9 RST description This 64-bit memory features high speed and fast fall-through times. It is organized as 16 words by 4 bits. FN PACKAGE (TOP VIEW) FULL OE NC VCC UNCK A first-in, first-out (FIFO) memory is a storage device that allows data to be written into and read from its array at independent data rates. This FIFO is designed to process data at rates up to 40 MHz in a bit-parallel format, word by word. Data is written into memory on a low-to-high transition at the load-clock (LDCK) input and is read out on a low-to-high transition at the unload-clock (UNCK) input.