SN74CB3Q16211 Datasheet | Texas Instruments

Features - Member of the Texas Instruments Widebus® family - High-bandwidth data path (up to 500 MHz(1)) - 5-V tolerant I/Os with device powered up or powered down - Low and flat ON-state resistance (ron) characteristics over operating range (ron = 5 Ω typical) - Rail-to-rail switching on data I/O ports - 0-V to 5-V switching with 3.3-V VCC - 0-V to 3.3-V switching with 2.5-V VCC - Bidirectional data flow, with near-zero propagation delay - Low input or output capacitance minimizes loading and signal distortion (Cio(OFF) = 4 p F typical) - Fast switching frequency (f OE = 20 MHz maximum) - Data and control inputs provide undershoot clamp diodes - Low power consumption (ICC = 1 m A typical) - VCC operating range from 2.3 V to 3.6 V - Data I/Os support 0-V to 5-V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V) - Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs - Ioff supports partial-power-down mode operation - Latch-up Performance Exceeds 100 m A Per JESD 78, Class II - ESD Performance Tested Per JESD 22 - 2000-V Human-Body Model (A114-B, Class II) - 1000-V Charged-Device Model (C101) - Supports both digital and analog applications: PCI interface, differential signal interface, memory interleaving, bus isolation, low-distortion signal gating 1 Charge Pump 2 Applications - AV receiver - Blu-ray recorder and player - Embedded PC - Portable audio dock - DLP front projection system 3 Description The SN74CB3Q16211 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211...