SN74CB3Q3245 Datasheet | Texas Instruments

FEATURES - High-Bandwidth Data Path (up to 500 MHz (1)) - Equivalent to IDTQS3VH384 Device - 5-V Tolerant I/Os With Device Powered Up or Powered Down - Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typ) - Rail-to-Rail Switching on Data I/O Ports - 0- to 5-V Switching With 3.3-V VCC - 0- to 3.3-V Switching With 2.5-V VCC - Bidirectional Data Flow With Near-Zero Propagation Delay - Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 p F Typ) - Fast Switching Frequency (f OE = 20 MHz Max) (1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008. - Data and Control Inputs Provide Undershoot Clamp Diodes - Low Power Consumption (ICC = 1 m A Typical) - VCC Operating Range From 2.3 V to 3.6 V - Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) - Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs - Ioff Supports Partial-Power-Down Mode Operation - Latch-Up Performance Exceeds 100 m A Per JESD 78, Class II - ESD Performance Tested Per JESD 22 - 2000-V Human-Body Model (A114-B, Class II) - 1000-V Charged-Device Model (C101) - Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating DBQ, DGV, OR PW PACKAGE (TOP VIEW) RGY PACKAGE (TOP VIEW) NC 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 A8 9 GND 10 20 VCC 19 OE 18 B1 17 B2 16 B3 15 B4 14 B5 13 B6 12 B7 11 B8 - No internal connection 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 A8 9 20 19 OE 18 B1 17 B2 16 B3 15 B4 14 B5 13 B6 12 B7 B8 - No internal...