SN74CB3Q3305 Datasheet | Texas Instruments

Features - High-bandwidth data path (up to 500 MHz)1 - 5-V tolerant I/Os with device powered up or powered down - Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3 Ω typical) - Supports input voltage beyond supply on data I/O ports - 0 to 5 V switching with 3.3 V VCC - 0 to 3.3 V switching with 2.5 V VCC - Bidirectional data flow with near-zero propagation delay - Low input or output capacitance minimizes loading and signal distortion (Cio(OFF) = 3.5 p F typical) - Fast switching frequency (f OE = 20 MHz maximum) - Data and control inputs provide undershoot clamp diodes - Low power consumption (ICC = 0.25 m A typical) - VCC operating range from 2.3 V to 3.6 V - Data I/Os support 0 to 5 V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V) - Control inputs can be driven by TTL or 5 V/3.3 V CMOS outputs - Ioff supports partial-power-down mode operation - Latch-up performance exceeds 100 m A per JESD 78, Class II 2 Applications - IP phones: wired and wireless - Optical modules - Optical networking: video over fiber and EPON - Private branch exchange (PBX) - Wi MAX and wireless infrastructure equipment - USB, differential signal interface - Bus isolation 3 Description The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support highbandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband munications, networking, and dataintensive puting systems. This device is fully specified for partial-power-down applications using Ioff. The...