SN74CB3Q3345 Datasheet | Texas Instruments

FEATURES - High-Bandwidth Data Path (up to 500 MHz (1)) - 5-V-Tolerant I/Os With Device Powered Up or Powered Down - Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typ) - Rail-to-Rail Switching on Data I/O Ports - 0- to 5-V Switching With 3.3-V VCC - 0- to 3.3-V Switching With 2.5-V VCC - Bidirectional Data Flow With Near-Zero Propagation Delay - Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 4 p F Typ) - Fast Switching Frequency (f OE = 20 MHz Max) (1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008. - Data and Control Inputs Provide Undershoot Clamp Diodes - Low Power Consumption (ICC = 0.7 m A Typ) - VCC Operating Range From 2.3 V to 3.6 V - Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) - Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs - Ioff Supports Partial-Power-Down Mode Operation - Latch-Up Performance Exceeds 100 m A Per JESD 78, Class II - ESD Performance Tested Per JESD 22 - 2000-V Human-Body Model (A114-B, Class II) - 1000-V Charged-Device Model (C101) - Supports Both Digital and Analog Applications: Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating DBQ, DGV, OR PW PACKAGE (TOP VIEW) RGY PACKAGE (TOP VIEW) OE 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 A8 9 GND 10 20 VCC 19 OE 18 B1 17 B2 16 B3 15 B4 14 B5 13 B6 12 B7 11 B8 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 A8 9 20 19 OE 18 B1 17 B2 16 B9 15 B4 14 B5 13 B6 12 B7 B8 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products...