SN74CB3Q6800 Datasheet | Texas Instruments

FEATURES - High-Bandwidth Data Path (Up To 500 MHz (1)) - 5-V Tolerant I/Os With Device Powered Up or Powered Down - Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4.5 Ω Typ) - Rail-to-Rail Switching on Data I/O Ports - 0- to 5-V Switching With 3.3-V VCC - 0- to 3.3-V Switching With 2.5-V VCC - B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot Plugging - Supports PCI Hot Plug - Bidirectional Data Flow With Near-Zero Propagation Delay - Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 p F Typ) (1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008. - Fast Switching Frequency (f ON= 20 MHz Max) - Data and Control Inputs Provide Undershoot Clamp Diodes - Low Power Consumption (ICC = 0.75 m A Typ) - VCC Operating Range From 2.3 V to 3.6 V - Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) - Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs - Ioff Supports Partial-Power-Down Mode Operation - Latch-Up Performance Exceeds 100 m A Per JESD 78, Class II - ESD Performance Tested Per JESD 22 - 2000-V Human-Body Model (A114-B, Class II) - 1000-V Charged-Device Model (C101) - Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating DBQ, DGV, OR PW PACKAGE (TOP VIEW) ON 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 A8 9 A9 10 A10 11 GND 12 24 VCC 23 B1 22 B2 21 B3 20 B4 19 B5 18 B6 17 B7 16 B8 15 B9 14 B10 13 BIASV Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA...