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TMS28F400BZB - BOOT-BLOCK FLASH MEMORIES

This page provides the datasheet information for the TMS28F400BZB, a member of the TMS28F400BZT BOOT-BLOCK FLASH MEMORIES family.

Description

The TMS28F400BZx is a 524 288 by 8-bit / 262 144 by 16-bit (4 194 304-bit), boot-block flash memory that can be electrically block-erased and reprogrammed.

Features

  • user-selectable block erasure. The TMS28F400BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and.
  • 40°C to 85°C. device symbol nomenclature TMS28F400BZT 80 B DBJ L Temperature Range Designator L = 0°C to 70°C E =.
  • 40°C to 85°C Program/Erase Endurance B = 10 000 Cycles Boot Block Location Indicator T = Top Location B = Bottom Location Package Designator DBJ = Plastic Small-Outline Package Speed Designator 80 = 80 ns (± 10%.

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Datasheet preview – TMS28F400BZB

Datasheet Details

Part number TMS28F400BZB
Manufacturer Texas Instruments
File Size 387.88 KB
Description BOOT-BLOCK FLASH MEMORIES
Datasheet download datasheet TMS28F400BZB Datasheet
Additional preview pages of the TMS28F400BZB datasheet.

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Full PDF Text Transcription

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D Organization . . . 524 288 by 8 Bits 262 144 by 16 Bits D Array-Blocking Architecture − Two 8K-Byte Parameter Blocks − One 96K-Byte Main Block − Three 128K-Byte Main Blocks − One 16K-Byte Protected Boot Block − Top or Bottom Boot Locations D All Inputs / Outputs TTL Compatible D Maximum Access/Minimum Cycle Time VCC ± 10% ’28F400BZx80 80 ns ’28F400BZx90 90 ns (x = top (T) or bottom (B) boot-block configuration ordered) D 10 000 Program/Erase-Cycles D Two Temperature Ranges − Commercial . . . 0°C to 70°C − Extended . . . − 40°C to 85°C D Low Power Dissipation ( VCC = 5.5 V ) − Active Write . . . 330 mW ( Byte Write) − Active Read . . . 330 mW ( Byte Read) − Active Write . . . 358 mW ( Word Write) − Active Read . . . 330 mW ( Word Read) − Block Erase . . . 165 mW − Standby . . . 0.
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