Datasheet Details
| Part number | TMS29VF040 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 477.52 KB |
| Description | FLASH MEMORIES |
| Datasheet | TMS29VF040 TMS29LF040 Datasheet (PDF) |
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Overview: D Single Power Supply 3.3 V ± 0.3 V – TMS29LF040 2.7 V to 3.6 V – TMS29VF040 5 V ± 10% – See TMS29F040 Data sheet (Literature Number SMJS820) D Organization . . . 524288 By 8 Bits D Eight Equal Sectors of 64K Bytes – Any bination of Sectors Can Be Erased – Any bination of Sectors Can Be Marked as Read-Only D patible With JEDEC Electrically Erasable Programmable Read-Only Memory (EEPROM) mand Set D Fully Automated On-Chip Erase and Byte-Program Operations D 100000 Program / Erase Cycles D Erase-Suspend/ Erase-Resume Operation D patible With JEDEC Byte-Wide Pinouts D Low-Current Consumption – Active Read . . . 20 mA Typical – Active Program / Erase . . .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | TMS29VF040 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 477.52 KB |
| Description | FLASH MEMORIES |
| Datasheet | TMS29VF040 TMS29LF040 Datasheet (PDF) |
|
|
|
The TMS29LF040 and TMS29VF040 are 524 288 by 8-bit (4 194 304-bit), low-voltage, single-supply, programmable read-only memories that can be erased electrically and reprogrammed.
These devices are organized as eight independent 64K-byte sectors and are offered with access times between 80 ns and 150 ns.
An on-chip state machine controls the program and erase operations.
| Part Number | Description |
|---|---|
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| TMS29F002RB | FLASH MEMORIES |
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| TMS29F002T | 262144 BY 8-BIT FLASH MEMORIES |
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| TMS29F008T | FLASH MEMORIES |
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| TMS29F400T | FLASH MEMORIES |