TMS370C036A Datasheet | Texas Instruments

D CMOS/ EEPROM/ EPROM Technologies on a Single Device - Mask-ROM Devices for High-Volume Production - One-Time-Programmable (OTP) EPROM Devices for Low-Volume Production - Reprogrammable-EPROM Devices for Prototyping Purposes D Internal System Memory Configurations - On-Chip Program Memory Versions - ROM: 16K Bytes - EPROM: 16K Bytes - Data EEPROM: 256 Bytes - Static RAM: 256 Bytes Usable as Registers - Standby RAM With Separate Power Supply Pin: 256 Bytes D Flexible Operating Features - Low-Power Modes: STANDBY and HALT - mercial, Industrial, and Automotive Temperature Ranges - Clock Options - Divide-by-1 (2 MHz - 5 MHz SYSCLK) Phase-Locked Loop (PLL) - Divide-by-4 (0.5 MHz - 5 MHz SYSCLK) - Supply Voltage (VCC) 5 V ±10% D Programmable Acquisition and Control Timer (PACT) Module - Input Capture on up to Six Pins, Four of Which Can Have a Programmable...