This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | TMS416160P |
|---|---|
| Datasheet | TMS416160P TMS416160 Datasheet (PDF) |
| File Size | 399.78 KB |
| Manufacturer | Texas Instruments |
| Description | 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
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The TMS4xx160P series is a similar ‡ See Available Options Table. set of high-speed, low-power, self-refresh, 16 777 216-bit DRAMs organized as 1 048 576 words of 16 bits each. Both sets employ state-of-the-art enhanced performance implanted CMOS (EPIC™) technology for high performance, reliability, and low power at low cost.
See all Texas Instruments datasheets
| Part Number | Description |
|---|---|
| TMS416160 | 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
| TMS416169 | 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS |
| TMS416100 | DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS416100P | DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS416400 | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416400A | DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS416400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS416800 | HIGH-SPEED DRAMS |
| TMS416809 | HIGH-SPEED DRAMS |
