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TMS416409A - DYNAMIC RANDOM-ACCESS MEMORIES

General Description

The TMS41x409A and TMS42x409A series are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 4 194 304 words of four bits each.

These devices feature maximum RAS access times of 50, 60, and 70 ns.

All address and data-in lines are latched on chip to simplify system design.

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📁 Similar Datasheet

Part Number Description Manufacturer
TMS416409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS4116 16384-Bin Dynamic Random-Access Memory Texas Instruments Inc
TMS417409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS426409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor

Other Datasheets by Texas Instruments

Part Number Description
TMS416400 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
TMS416400A DYNAMIC RANDOM-ACCESS MEMORIES
TMS416400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
TMS416100 DYNAMIC RANDOM-ACCESS MEMORIES
TMS416100P DYNAMIC RANDOM-ACCESS MEMORIES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TMS416409A, TMS417409A, TMS426409A, TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS893B – AUGUST 1996 – REVISED APRIL 1997 This data sheet is applicable to all TMS41x409As and TMS42x409As symbolized by Revision “B”, Revision “E”, and subsequent revisions as described in the device symbolization section. D Organization . . . 4 194304 × 4 D Single Power Supply (5 V or 3.