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TMS418169A - DYNAMIC RANDOM-ACCESS MEMORIES

Description

16 bits each.

Features

  • maximum RAS access times of 50-, 60-, and 70 ns, and the OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable TMS428169A features maximum RAS access times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS418169A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). The TMS428169A is offered in a 44/50-lead plastic surface-mo.

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Datasheet preview – TMS418169A

Datasheet Details

Part number TMS418169A
Manufacturer Texas Instruments
File Size 422.65 KB
Description DYNAMIC RANDOM-ACCESS MEMORIES
Datasheet download datasheet TMS418169A Datasheet
Additional preview pages of the TMS418169A datasheet.

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Full PDF Text Transcription

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This data sheet is applicable to TMS418169A and TMS428169A symbolized by Revision “E”, and subsequent revisions as described in the device symbolization section. D Organization . . . 1 048576 by 16 Bits D Single 5-V Power Supply for TMS418169A (± 10% Tolerance) D Single 3.3-V Power Supply for TMS428169A (± 0.
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