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TMS426160 Datasheet PDF

Texas Instruments TMS426160

The TMS4xx160 series is a set of high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply‡ Ground Write Enable bits each. The TMS4xx160P series is a similar ‡ See Available Options Table. Both sets employ state-of-the-art enhanced performance implanted CMOS (EPIC™) technology for high performance, reliability, and low power at low cost.
Part No. TMS426160
Datasheet TMS426160 Download
Manufacturer
Texas Instruments
Description 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
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TMS426160 datasheet page 1 preview
TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C – MAY 1995 – REVISED NOVEMBER 1995 D Organization . . . 1 048576 × 16 D Single Power Supply (5 V or 3.3 V) D Performance Ranges: ACCESS ACCESS ACCESS TIME TIME TIME READ OR WRITE DGE PACKAGE ( TOP VIEW ) VCC 1 DQ0 2 50 VSS 49 DQ15 DZ PACKAGE ( TOP VIEW ) VCC 1 DQ0 2 42 VSS 41 DQ15 tRAC MAX tCAC MAX tAA MAX CYCLE MIN ’4xx160/P-60 60 ns 15 ns 30 ns 110 ns ’4xx160/P-70 70 ns 18 ns 35 ns 130 ns ’4xx160/P-80 80 ns 20 ns 40 ns 150 ns D Enhanced Page-Mode Operation With CAS-Before-RAS ( CBR) Refresh D Long Refresh Period and Self-Refresh Option ( TMS4xx160P) D 3-State Unlatched Output D Low Power Dissipation D High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package and 44/50-Lead (DGE Suffix) Surface-Mount Thin Small-Outline Package ( TSOP) D Operating Free-Air Temperature Range 0°C to 70°C D Fabricated Using the Texas Instrum...
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