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TMS465169P - DYNAMIC RANDOM-ACCESS MEMORIES

This page provides the datasheet information for the TMS465169P, a member of the TMS465169 DYNAMIC RANDOM-ACCESS MEMORIES family.

Datasheet Summary

Description

The and TMS465169 is a high-speed, 67 108 864-bit dynamic random-access memory (DRAM) device organized as 4 194 304 words of 16 bits.

The TMS465169P is similar DRAM but includes a long refresh period and a self-refresh option.

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Datasheet preview – TMS465169P

Datasheet Details

Part number TMS465169P
Manufacturer Texas Instruments
File Size 448.50 KB
Description DYNAMIC RANDOM-ACCESS MEMORIES
Datasheet download datasheet TMS465169P Datasheet
Additional preview pages of the TMS465169P datasheet.

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Full PDF Text Transcription

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D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) D Performance Ranges: ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE tRAC tCAC MAX MAX tAA MAX tHPC MIN ’46x169/P-50 50 ns 13 ns 25 ns 20 ns ’46x169/P-60 60 ns 15 ns 30 ns 25 ns D Extended-Data-Out (EDO) Operation D xCAS-Before-RAS ( xCBR) Refresh D Long Refresh Period and Self-Refresh Option ( TMS46x169P) D 3-State Unlatched Output D Low Power Dissipation D High-Reliability Plastic 50-Lead 400-Mil-Wide Surface-Mount Thin Small-Outline Package ( TSOP) (DGE Suffix) D Operating Free-Air Temperature Range 0°C to 70°C DEVICE TMS465169 TMS465169P AVAILABLE OPTIONS POWER SUPPLY SELFREFRESH, BATTERY BACKUP REFRESH CYCLES 3.3 V — 4 096 in 64 ms 3.
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