TMS55171 Datasheet | Texas Instruments

TMS55160, TMS55161, TMS55170, TMS55171 262144 BY 16-BIT MULTIPORT VIDEO RAMS D Organization: DRAM: 262 144 Words × 16 Bits SAM: 256 Words × 16 Bits D Single 5.0-V Power Supply (±10%) D Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and Serial-Address-Memory (SAM) Ports D Write-per-Bit Function for Selective Write to Each I/O of the DRAM Port D Byte-Write Function for Selective Write to Lower Byte (DQ0 - DQ7) or Upper Byte (DQ8- DQ15) of the DRAM Port D 4 - Column or 8 - Column Block - Write Function for Fast Area - Fill Operations D Enhanced Page Mode for Faster Access With Extended-Data-Output (EDO) Option for Faster System Cycle Time D CAS-Before-RAS (CBR) and Hidden Refresh Functions D Long Refresh Period - Every 8 ms (Maximum) D Full - Register- Transfer Function Transfers Data from the DRAM to the Serial Register performance ranges SMVS464 - MARCH1996 D Split-Register-Transfer Function Transfers Data from the DRAM to One-Half of the Serial Register While the Other Half is Outputing Data to the SAM Port D 256 Selectable Serial Register Starting Points D Programmable Split-Register Stop Point D Up to 55-MHz Uninterrupted Serial-Data Streams D 3-State Serial Outputs for Easy Multiplexing of Video Data...