TPS22906 Datasheet | Texas Instruments

Features 2 Applications - 1 Low-Input Voltage: 1.0 V to 3.6 V - Ultra-Low ON-State Resistance - r ON = 90 mΩ at VIN = 3.6 V - r ON = 100 mΩ at VIN = 2.5 V - r ON = 114 mΩ at VIN = 1.8 V - r ON = 172 mΩ at VIN = 1.2 V - 500-m A Maximum Continuous Switch Current - Ultra-Low Quiescent Current: 82 n A at 1.8 V - Ultra-Low Shutdown Current: 44 n A at 1.8 V - Low Control Input Thresholds Enable Use of 1.2V/1.8-V/2.5-V/3.3-V Logic - Controlled Slew Rate to Avoid Inrush Current: 220 μs tr - ESD Performance Tested Per JESD 22 - 2000-V Human Body Model (A114-B, Class II) - 1000-V Charged-Device Model (C101) - Four-Terminal Wafer-Chip-Scale Package (WCSP) - 0.9 mm × 0.9 mm, 0.5-mm Pitch, 0.5-mm Height - Personal Digital Assistants (PDAs) - Cellular Phones - GPS Devices - MP3 Players - Digital Cameras - Peripheral Ports - Portable Instrumentation - RF Modules 3 Description TPS22906 device is an ultra-small, low ON-state resistance (r ON) load switch with controlled turn on. The device contains a P-channel MOSFET that operates over an input voltage range of 1.0 V to 3.6 V. The switch is controlled by an on/off input (ON), which is capable of interfacing directly with lowvoltage control signals. A 120-Ω on-chip load resistor is added for output quick discharge when the switch is turned off. TPS22906 is available in a space-saving 4-terminal WCSP with 0.5-mm pitch (YZV). The device is characterized for operation over the free-air temperature range of - 40°C to 85°C. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) DSBGA (4) 0.90 mm × 0.90 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical Application Schematic VBATT SMPS (see Note...