TPS76815-EP Datasheet | Texas Instruments

FEATURES D 1- A Low-Dropout Voltage Regulator D Available in 1.5-V, 1.8-V, 2.5-V, 2.7-V, 2.8-V, 3.0-V, 3.3-V, 5.0-V Fixed Output and SUPPORTS DEFENSE, AEROSPACE AND MEDICAL APPLICATION D Controlled Baseline D One Assembly/Test Site Adjustable Versions D Dropout Voltage Down to 230 m V at 1 A (TPS76850) D Ultralow 85- µA Typical Quiescent Current D Fast Transient Response D 2% Tolerance Over Specified Conditions for Fixed-Output Versions D One Fabrication Site D Available in Military (- 555C/1255C) Temperature Range{ D Extended Product LIfe Cycle D Extended Product- Change Notification D Product Traceability † Additional temperature ranges are available - contact factory. D Open Drain Power Good (See TPS767xx for Power-On Reset With 200-ms Delay Option) D 20-Pin TSSOP (PWP)Power PAD Package PWP PACKAGE (TOP VIEW) D Thermal Shutdown Protection GND/HSINK 1 20 GND/HSINK GND/HSINK 2 19 GND/HSINK description GND 3 18 NC This device is designed to have a fast transient response and be stable with 10-µF low ESR capacitors. This bination provides high performance at a reasonable cost. NC 4 EN 5 IN 6 IN 7 NC 8 17 NC 16 PG 15 FB/NC 14 OUT 13 OUT Because the PMOS device behaves as a low-value GND/HSINK 9 12 GND/HSINK resistor, the dropout voltage is very low (typically 230 m V at an output current of 1 A for the TPS76850) and is directly proportional to the output current. GND/HSINK 10 11 GND/HSINK NC - No internal connection Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent of output loading (typically 85 µA over the full range of output current, 0 m A to 1 A). These two key specifications yield a significant improvement in operating life for battery-powered systems. This LDO family also features a sleep mode; applying a TTL high signal to EN (enable) shuts down the regulator, reducing the quiescent current to less than 1 µA at TJ = 25°C. Power good (PG) is an active high output, which...