Datasheet4U Logo Datasheet4U.com

TXS4555 - 1.8V/3V SIM-Card PowerSupply

Datasheet Summary

Description

The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards.

Features

  • 1.
  • Level Translator.
  • VCC Range of 1.65 V to 3.3 V.
  • VBATT Range from 2.3 to 5.5V.
  • Low-Dropout (LDO) Regulator.
  • 50-mA LDO Regulator With Enable.
  • 1.8-V or 2.95-V Selectable Output Voltage.
  • 2.3-V to 5.5-V Input Voltage Range.
  • Very Low Dropout: 100mV (Max) at 50mA.
  • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3.
  • ESD Protection Exceeds JESD 22.
  • 2000-V Human-Body Model (A11.

📥 Download Datasheet

Datasheet preview – TXS4555

Datasheet Details

Part number TXS4555
Manufacturer Texas Instruments
File Size 1.22 MB
Description 1.8V/3V SIM-Card PowerSupply
Datasheet download datasheet TXS4555 Datasheet
Additional preview pages of the TXS4555 datasheet.

📁 Similar Datasheet

Other Datasheets by Texas Instruments

Full PDF Text Transcription

Click to expand full text
TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 1.8V/3V SIM Card Power Supply With Level Translator Check for Samples: TXS4555 FEATURES 1 • Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range from 2.3 to 5.5V • Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – 2.3-V to 5.5-V Input Voltage Range – Very Low Dropout: 100mV (Max) at 50mA • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3 • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-B) – 500-V Charged-Device Model (C101) – 8kV HBM for SIM Pins • Package – 16-Pin QFN (3 mm x 3 mm) – 12-Pin QFN (2mm x 1.
Published: |