UCC21750-Q1
Overview
The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current.
- 5.7-kVRMS single channel isolated gate driver
- AEC-Q100 qualified for automotive applications - Device temperature grade 0: -40°C to +150°C ambient operating temperature range - Device HBM ESD classification level 3A - Device CDM ESD classification level C6
- SiC MOSFETs and IGBTs up to 2121Vpk
- 33-V maximum output drive voltage (VDD - VEE)
- ±10-A drive strength and split output
- 150-V/ns minimum CMTI
- 200-ns response time fast DESAT protection
- 4-A Internal active miller clamp
- 400-mA soft turn-off when fault happens
- Isolated analog sensor with PWM output for - Temperature sensing with NTC, PTC or thermal diode - High voltage DC-link or phase voltage
