The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection
UCC21759-Q1
SLUSEB4B – AUGUST 2020 – REVISED FEBRUARY 2024
UCC21759-Q1 Automotive 10A Source/Sink Basic Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
1 Features
• 3kVRMS single channel isolated gate driver • AEC-Q100 qualified for automotive applications
– Device temperature grade 1: -40°C to +125°C ambient operating temperature range
– Device HBM ESD classification level 3A – Device CDM ESD classofication level C3 • Drives SiC MOSFETs and IGBTs up to 900Vpk • 33V maximum output drive voltage (VDD-VEE) • High peak drive current and high CMTI • ±10A drive strength and split output • 150V/ns minimum CMTI • 200ns response time fast DESAT protection • 4A internal active Miller clamp • 400mA soft turn-off under fault conditions •