UCC21759-Q1
Overview
The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
- 3kVRMS single channel isolated gate driver
- AEC-Q100 qualified for automotive applications - Device temperature grade 1: -40°C to +125°C ambient operating temperature range - Device HBM ESD classification level 3A - Device CDM ESD classofication level C3
- Drives SiC MOSFETs and IGBTs up to 900Vpk
- 33V maximum output drive voltage (VDD-VEE)
- High peak drive current and high CMTI
- ±10A drive strength and split output
- 150V/ns minimum CMTI
- 200ns response time fast DESAT protection
- 4A internal active Miller clamp
- 400mA soft turn-off under fault conditions
