UCC28C55 Datasheet | Texas Instruments

Features - Undervoltage lockout options to support both Si and Si C MOSFET applications - 30-V VDD absolute maximum voltage - 1-MHz maximum fixed frequency operation - 50-μA startup current, 75-μA maximum - Low operating current: 1.3 m A (at f OSC = 52 k Hz) - Fast 35-ns, cycle-by-cycle overcurrent limiting - ±1-A peak driving current - Rail-to-rail output - 25-ns rise time - 20-ns fall time - ±1% accurate 2.5-V error amplifier reference - Pin-to-pin patible and drop-in replacement for UCCx8C4x - Functional Safety-Capable - Documentation available to aid functional safety system design 2 Applications - General purpose single-ended DC-DC or off-line isolated power converters - Auxiliary power supply for solar power inverters, motor drives, energy storage systems - Isolated power supply for EV charging stations 3 Description The UCCx8C5x family of devices are highperformance current-mode PWM controllers that can drive both Si and Si C MOSFETs in various applications. The UCCx8C5x family is a more efficient and robust version of the UCCx8C4x. The UCCx8C5x family has new UVLO thresholds that allow for reliable Si C MOSFET operation (UCC28C56-59), in addition to existing UVLO thresholds for continued Si MOSFET support (UCCx8C50-55). VDD absolute maximum voltage rating is extended from 20 V to 30 V for optimally driving the gate of 20-Vgs, 18-Vgs, or 15-Vgs Si C MOSFETs, while also allowing for the exclusion of an external LDO. Device Performance Improvements PARAMETER UCCx8C4x UCCx8C5x Supply current at 52 k Hz 2.3 m A 1.3 m A Startup current (max) 100 µA 75 µA VDD abs max 20 V 30 V Reference Voltage Accuracy ±2% ±1% UVLO and DMAX for Si FET UVLO and DMAX for Si C FET Smallest package...