UCC28C59-Q1 Datasheet | Texas Instruments

Features 3 Description - Undervoltage lockout options to support both Si and Si C MOSFET applications - 30-V VDD absolute maximum voltage - 1-MHz maximum Fixed frequency oeration - 50-μA startup current, 75-μA maximum - Low operating current : 1.3 m A at f OSC = 52 k Hz - High operating TJ : 150℃ maximum - Fast 35-ns cycle-by-cycle over-current limiting - ±1-A peak driving current - Rail-to-rail output: - 25-ns rise time - 20-ns fall time - ±1% accurate 2.5-V error amplifier reference - Pin-to-pin patible and drop-in replacement for UCC28C4x-Q1 - Functional Safety-Capable - Documentation available to aid functional safety system design - AEC-Q100 qualified with the following results - Device temperature grade 1: -40°C to 125°C - Device HBM classification level 2: ±2 k V - Device CDM classification level C4B: 750 V 2 Applications - Traction inverter HV to LV backup supply - OBC and DC/DC converter isolated bias power supply - HVAC pressor HV isolated power supply - Single-ended DC converters in AC and DC EV charging equipment The UCC28C5x-Q1 family of devices are high performance current-mode PWM controllers which can be used to drive both Si and Si C MOSFETs in various applications. The UCC28C5x-Q1 family is a more efficient and robust version of the UCC28C4x Q1. The UCC28C5x-Q1 family has new UVLO thresholds that allow for reliable Si C MOSFET operation (UCC28C56-59-Q1), in addition to existing UVLO thresholds for continued Si MOSFET support (UCC28C50-55-Q1). VDD absolute maximum voltage rating is extended from 20 V to 30 V for optimally driving the gate of 20-Vgs, 18-Vgs, or 15-Vgs Si C MOSFETs, while also allowing for the exclusion of an external LDO. Device Performance Improvements PARAMETER UCC28C4x-Q1 UCC28C5x-Q1 Supply current at 52 k Hz 2.3 m A 1.3 m A Startup current (max) 100 µA 75 µA VDD abs max 20...