BSM100GD120DLC
BSM100GD120DLC is IGBT-Module manufactured by eupec GmbH.
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Technische Information / Technical Information
IGBT-Module IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t
- value, Diode Isolations-Prüfspannung insulation test voltage t P = 1 ms TC = 80 °C TC = 25 °C t P = 1 ms, TC = 80°C VCES IC,nom. IC ICRM 1200 100 160 200 V A A A
TC=25°C, Transistor
Ptot
VGES
+/- 20V
IFRM
VR = 0V, t p = 10ms, T Vj = 125°C
2 I t
1,71 k A2s
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5 k V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 100A, V GE = 15V, Tvj = 25°C IC = 100A, V GE = 15V, Tvj = 125°C IC = 4m A, V CE = VGE, Tvj = 25°C VGE(th) VCE sat min.
4,5 typ.
2,1 2,4 5,5 max.
2,6 2,9 6,5 V V V
VGE = -15V...+15V
- 1,1
- µC f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
- 6,5
- n F f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V VCE = 1200V, V GE = 0V, Tvj = 25°C VCE = 1200V, V GE = 0V, Tvj = 125°C VCE = 0V, V GE = 20V, Tvj =...
