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BSM 400 GA 120 DN2
IGBT Power Module
• Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate
Type BSM 400 GA 120 DN2 BSM 400 GA 120 DN2 S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C
VCE
IC
Package SINGLE SWITCH SSW SENSE 1
Ordering Code C67070-A2302-A70 C67070-A2308-A70
1200V 550A 1200V 550A
Symbol VCE VCGR
Values 1200 1200
Unit V
VGE IC
± 20 A 550 400
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 125 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.
BSM400GA120DN2 Datasheet
