BSM50GD170DL Datasheet PDF

European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 19.05 3.81 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 3.81 15.24 1.15x1.0 5 x 15.24 =76.2 110 connections to be made externally 21 13 1 2 3 4 20 59 6 10 19 17 15 7 11 8 12 14 01.07.1998 BSM 50 GD 170 DL Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Grenzlastintegral der Diode Isolations-Prüfspannung repetitive peak collector current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current I2t - value, Diode insulation test voltage TC = 80°C TC = 25°C tp = 1 ms, TC = 80°C TC = 25°C, Transistor tp = 1 ms VR = 0V, tp = 10ms, TVj = 125°C RMS, f = 50 Hz, t = 1 min.