excelliancemos EMB22N10H
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | EMB22N10H |
|---|---|
| Datasheet | EMB22N10H Download |
| Manufacturer |  excelliancemos |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 36 ID TC = 100 °C 22 IDM 140 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH, ID=30A, RG=25Ω EAS 45 Repetitive Avalanche Energy2 L = 0.05mH EAR 22.5 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=50V, L=0.1mH, VG=10V, IL=18A, Rated VDS=100V N-CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case R●JC 2.5 Junction-to-Ambient R●JA 62 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 4Guarantee by Engineering test UNIT V A mJ W °C UNIT °C / W 2024/03/08 p.1ELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherw...
