excelliancemos EMD01N04HCS
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | EMD01N04HCS |
|---|---|
| Datasheet | EMD01N04HCS Download |
| Manufacturer |  excelliancemos |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
DESCRIPTION
: BVDSS RDSON(MAX)VGS=10V ID @TC=25°C ID @TA=25°C N-CH 40V 1.2mΩ 260A 66A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant●
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 VGS TC = 25 °C TC = 100 °C ID TA = 25 °C TA = 70 °C ID IDM IAS L = 0.1mH EAS L = 0.05mH EAR Power Dissipation Power Dissipation TC = 25 °C TC = 100 °C PD TA = 25 °C TA = 70 °C PD Operating Junction & Storage Temperature Range Tj, Tstg●100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 63A,RG=25Ω,Rated VDS=40V N-CH
●THERMAL RESISTANCE RATINGS ±20 260 165 66 53 657 104 541 270 125 50 8.2 5 -55 to 150 THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 1.0 Junction-to-Ambient3,4 t≦10s RθJA Steady-State RθJA 15 50 1Pulse width limited by maximum junction temperature.
