excelliancemos EMVB70N06JS
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | EMVB70N06JS |
|---|---|
| Datasheet | EMVB70N06JS Download |
| Manufacturer |  excelliancemos |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
DESCRIPTION
: N-CH BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 60V 75mΩ 83mΩ ID @TC=25℃ 10A ID @TA=25℃ 2.8A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant AEC-Q101 Qualified●
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C TC = 100 °C ID Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TA = 25 °C TA = 70 °C ID IDM IAS L = 1mH EAS L = 0.5mH EAR Power Dissipation TC = 25 °C TC = 100 °C PD Power Dissipation TA = 25 °C TA = 70 °C PD Operating Junction & Storage Temperature Range Tj, Tstg●100% UIS testing in condition of VD=40V, L=1mH, VG=10V, IL=5A, Rated VDS=60V N-CH
●THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Lead RθJC Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
