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MX0103A - N-Channel Enhancement Mode Power MOSFET

General Description

The MX0103A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS=100V, ID=2.5A RDS(ON)(Typ. )=140mΩ @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package PINOUT.

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Datasheet Details

Part number MX0103A
Manufacturer imosemi
File Size 661.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX0103A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET MX0103A DESCRIPTION The MX0103A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES  VDS=100V, ID=2.5A RDS(ON)(Typ.