MX2012E - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Key Features

VDS=20V, ID=8A RDS(ON)(Typ. )=8.5mΩ @ VGS=4.5V RDS(ON)(Typ. )=10mΩ @ VGS=2.5V.
Surface-mounted package.
Advanced trench cell design.
Extremely low threshold voltage.
ESD protected (HBM>2KV).

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MX2012E dual n-channel enhancement mode power mosfet by imosemi - Datasheet Preview

Datasheet Details

Part number	MX2012E
Manufacturer	imosemi
File Size	449.02 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MX2012E Datasheet

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Dual N-Channel Enhancement Mode Power MOSFET MX2012E DESCRIPTION The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. GENERAL FEATURES  VDS=20V, ID=8A RDS(ON)(Typ.)=8.5mΩ @ VGS=4.5V RDS(ON)(Typ.)=10mΩ @ VGS=2.