MX2012E Key Features
- VDS=20V, ID=8A
- Surface-mounted package
- Advanced trench cell design
- Extremely low threshold voltage
- ESD protected (HBM>2KV)
- Portable appliances
- Battery management
MX2012E is Dual N-Channel Enhancement Mode Power MOSFET manufactured by imosemi.
The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.