SSB11N60C2
SSB11N60C2 is Power Transistor manufactured by Infineon.
ature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
P-TO220-3-31
Product Summary VDS @ Tjmax 650 R DS(on) ID
P-TO263-3-2
V Ω A
0.38 11
P-TO220-3-1
1 P-TO220-3-31
Type SPP11N60C2 SPB11N60C2 SPA11N60C2
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4295 Q67040-S4298
Marking 11N60C2 11N60C2 11N60C2
P-TO220-3-31 Q67040-S4332
Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 11 7 111) 71) 22 340 0.6 11 6 ±20
±30
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =5.5A, VDD =50V
ID puls EAS EAR IAR
22 340 0.6 11 6 ±20
±30
A m J
Avalanche energy, repetitive t AR limited by Tjmax...
