Datasheet4U Logo Datasheet4U.com

ISL71040M Datasheet Radiation Tolerant Low-side Gan Fet Driver

Manufacturer: Intersil (now Renesas)

Overview: ISL71040M Radiation Tolerant Low-Side GaN FET Driver Datasheet The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs.

Key Features

  • an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14.7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M’s split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on an.

More Datasheets from Intersil (now Renesas)

Part Number Description
ISL71041M Radiation Tolerant Single-Ended Current Mode PWM Controller
ISL71043M Radiation Tolerant Single-Ended Current Mode PWM Controller
ISL71001M 6A Synchronous Buck Regulator
ISL71010B25 2.5V Precision Voltage Reference
ISL71010B50 5V Precision Voltage Reference
ISL71026M 3.3V CAN Transceiver
ISL71030M Radiation Tolerant 5V 16-Channel Analog Multiplexer
ISL71090SEH12 Radiation Hardened Ultra Low Noise / Precision Voltage Reference
ISL71090SEH25 2.5V Radiation Hardened Ultra Low Noise / Precision Voltage Reference
ISL71090SEH50 Precision Voltage Reference

ISL71040M Distributor