Datasheet Summary
Radiation Tolerant Low-Side GaN FET Driver
The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.
The ISL71040M has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage Features an Undervoltage Lockout (UVLO) protection...