Intersil ISL71040M
The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs.| Part No. | ISL71040M |
|---|---|
| Datasheet | ISL71040M Download |
| Manufacturer |  Intersil |
| Description | Radiation Tolerant Low-Side GaN FET Driver |
| Buy | Stock & Price |
FEATURES
● Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU)● Wide operating voltage range of 4.5V to 13.2V
● Up to 14.7V logic inputs (regardless of VDD level)
● Inverting and non-inverting inputs
● Optimized to drive enhancement mode GaN FETs
● Internal 4.5V regulated gate drive voltage
● Independent outputs for adjustable turn-on/turn-off speeds
● NiPdAu-Ag Lead finish (Sn-free, Pb-free)
● Moisture Sensitivity Level (MSL) Rating: 1
● Passes NASA Low Outgassing Specifications
● Full military temperature range operation
● TA = -55°C to +125°C
● TJ = -55°C to +150°C
● TID Radiation Lot Acceptance Testing (LDR: <0.01rad(Si)/s)
● ISL71040M30RTZ: 30krad(Si)
● ISL71040M50RTZ: 50krad(Si)
● SEE Characterization
● No DSEE with VDD = 16.5V at 43MeV●cm2/mg
● SET ≤15µm2 at 43MeV●cm2/mg
APPLICATIONS
● Flyback and forward converters● Boost and PFC converters
● Secondary synchronous FET drivers 4.8 4.7 4.6 4.5 4.4 4.3 -55°C 125°C 25°C 4.2 4 5 6 7 8 9 10 11 12 13 14 VDD (V) Figure 2.
