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BS170P - N-channel MOSFET

Features

  • 60 Volt VDS.
  • RDS(on)=5Ω BS170P REFER TO ZVN3306A FOR GRAPHS.

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Datasheet Details

Part number BS170P
Manufacturer marutsu
File Size 21.46 KB
Description N-channel MOSFET
Datasheet download datasheet BS170P Datasheet
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    Full PDF Text Transcription

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    N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5Ω BS170P REFER TO ZVN3306A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg D G S E-Line TO92 Compatible VALUE 60 270 3 ±20 625 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 60 V ID=100µA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.8 3 V ID=1mA, VDS=VGS Gate Body Leakage Zero Gate Voltage Drain Current IGSS IDSS 10 nA VGS=15V, VDS=0V 0.
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