MS4N1350B Overview
MasPower has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID...
MS4N1350B Key Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package
- Creepage distance path is 5.4 mm (typ.) for TO-3PF