MSG20T65FQC Overview
Features Low gate charge Trench FS Technology, saturation voltage: TC=25℃ - 1.4 - V VGE=0V,IF=20A.
MSG20T65FQC Key Features
- Low gate charge
- Trench FS Technology
- saturation voltage: VCE(sat)
- RoHS product
MOSFET
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MSG20T65FQC |
|---|---|
| Manufacturer | maspower |
| File Size | 8.12 MB |
| Description | MOSFET |
| Datasheet | MSG20T65FQC MSG20T65FQS Datasheet (PDF) |
|
|
|
Features Low gate charge Trench FS Technology, saturation voltage: TC=25℃ - 1.4 - V VGE=0V,IF=20A.
| Part Number | Description |
|---|---|
| MSG20T65FQS | MOSFET |
| MSG20T65FQT | MOSFET |
| MSG20T120FQC | N-Channel IGBT |
| MSG25T120FQC | MOSFET |
| MSG15T120FQC | N-Channel IGBT |
| MSG40T120FH | High speed Trench Fieldstop IGBT |
| MSG40T65FH | 650V Field stop Trench IGBT |