Datasheet4U Logo Datasheet4U.com

MSN4688 - MOSFET

Description

MSN4688 V1.0 4/9 www.maspowersemi.com Typical Characteristics TA=25℃ N-Channel MSN4688 V1.0 5/9 www.maspowersemi.com Typical Characteristics TA=25℃ N-Channel MSN4688 V1.0 6/9 www.maspowersemi.com Typical Characteristics TA=25℃ P-Channel MSN4688 V1.0 7/9 www.maspowersemi.com Typic

Features

  • Low On resistance.
  • 4.5V/-4.5V drive.
  • RoHS compliant Package Dimensions MSN4688 Absolute Maximum Ratings TA = 25ºC Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol Conditions Ratings N-Ch P-Ch VDSS VGSS ID IDP PD PT Tch Tstg Drain-Source Voltage 60 -60 Gate-Source Voltage ±25 ±25 Continuous Drain Current 5 -3.5 PW ≤ 10μS, du.

📥 Download Datasheet

Datasheet preview – MSN4688

Datasheet Details

Part number MSN4688
Manufacturer maspower
File Size 1.02 MB
Description MOSFET
Datasheet download datasheet MSN4688 Datasheet
Additional preview pages of the MSN4688 datasheet.

📁 Similar Datasheet

  • MSN014WE - N-Channel Enhancement Mode Power MOSFET (MORESEMI)
  • MSN014WE - N-Channel MOSFET (MORESEMI)
  • MSN0205 - N-Channel MOSFET (MORESEMI)
  • MSN0207E - N-Channel MOSFET (MORESEMI)
  • MSN0212W - N-Channel MOSFET (MORESEMI)
  • MSN0260D - N-Channel MOSFET (MORESEMI)
  • MSN0304 - N-Channel MOSFET (MORESEMI)
  • MSN0306 - N-Channel MOSFET (MORESEMI)
  • MSN0310W - N-Channel MOSFET (MORESEMI)
  • MSN0318W - N-Channel MOSFET (MORESEMI)
Other Datasheets by maspower

    Full PDF Text Transcription

    Click to expand full text
    Features  Low On resistance  4.5V/-4.5V drive  RoHS compliant Package Dimensions MSN4688 Absolute Maximum Ratings TA = 25ºC Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol Conditions Ratings N-Ch P-Ch VDSS VGSS ID IDP PD PT Tch Tstg Drain-Source Voltage 60 -60 Gate-Source Voltage ±25 ±25 Continuous Drain Current 5 -3.5 PW ≤ 10μS, duty cycle ≤ 1% 20 -14 Mounted on a ceramic board (1000mm2 ×0.8mm) 1unit 1.3 Mounted on a ceramic board (1000mm2 ×0.8mm) 1.7 Maximum Junction Temperature 150 Storage Temperature Range -55~+150 Unit V V A A W W ºC ºC V1.0 1/9 www.maspowersemi.
    Published: |