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MSN4688 - MOSFET

General Description

MSN4688 V1.0 4/9 www.maspowersemi.com Typical Characteristics TA=25℃ N-Channel MSN4688 V1.0 5/9 www.maspowersemi.com Typical Characteristics TA=25℃ N-Channel MSN4688 V1.0 6/9 www.maspowersemi.com Typical Characteristics TA=25℃ P-Channel MSN4688 V1.0 7/9 www.maspowersemi.com Typic

Key Features

  • Low On resistance.
  • 4.5V/-4.5V drive.
  • RoHS compliant Package Dimensions MSN4688 Absolute Maximum Ratings TA = 25ºC Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol Conditions Ratings N-Ch P-Ch VDSS VGSS ID IDP PD PT Tch Tstg Drain-Source Voltage 60 -60 Gate-Source Voltage ±25 ±25 Continuous Drain Current 5 -3.5 PW ≤ 10μS, du.

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Datasheet Details

Part number MSN4688
Manufacturer maspower
File Size 1.02 MB
Description MOSFET
Datasheet download datasheet MSN4688 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Low On resistance  4.5V/-4.5V drive  RoHS compliant Package Dimensions MSN4688 Absolute Maximum Ratings TA = 25ºC Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol Conditions Ratings N-Ch P-Ch VDSS VGSS ID IDP PD PT Tch Tstg Drain-Source Voltage 60 -60 Gate-Source Voltage ±25 ±25 Continuous Drain Current 5 -3.5 PW ≤ 10μS, duty cycle ≤ 1% 20 -14 Mounted on a ceramic board (1000mm2 ×0.8mm) 1unit 1.3 Mounted on a ceramic board (1000mm2 ×0.8mm) 1.7 Maximum Junction Temperature 150 Storage Temperature Range -55~+150 Unit V V A A W W ºC ºC V1.0 1/9 www.maspowersemi.