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MSESD3V3C - Transient Voltage Suppressor

Features

  • Small Body Outline Dimensions: nom 0.039″ x 0.024″ (1.0x0.6 mm).
  • Low Body Height: nom 0.019″ (0.5 mm).
  • Low Capacitance 12 pF.
  • Low Clamping Voltage.
  • Reverse Working (Stand-off) Voltage: 3.3 V.
  • Low Leak age.
  • Response Time is Typically < 1 ns.
  • IEC61000-4-2 Level 4 ESD Prot ection.
  • This is a Pb-Free Device Mechanical Characteristi cs:.
  • CASE: Void-free, trans fer-molded, thermosetting plastic Epoxy Meets UL 94 V.

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Datasheet preview – MSESD3V3C

Datasheet Details

Part number MSESD3V3C
Manufacturer msksemi
File Size 325.05 KB
Description Transient Voltage Suppressor
Datasheet download datasheet MSESD3V3C Datasheet
Additional preview pages of the MSESD3V3C datasheet.

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Full PDF Text Transcription

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MSESD3V3C Transient Voltage Suppressor Micro-Packaged Diode for ESD Protection The MSESD3V3C Series is designed to protect voltage sensitive components from damage or latch-up due to ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD for board level. Because of its small size and bi-directional design, it is ideal for use in cellular phones, MP3 players, and portable applications that require audio line protection. 1 DFN 10 06 -2L Specification Features  Small Body Outline Dimensions: nom 0.039″ x 0.024″ (1.0x0.6 mm)  Low Body Height: nom 0.019″ (0.5 mm)  Low Capacitance 12 pF  Low Clamping Voltage  Reverse Working (Stand-off) Voltage: 3.
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