FEATURES
Symbol IT(RMS) VDRM/VRRM IGT Value 10 600 to 1000 15 Unit A V mA DESCRIPTION
A K A G TO-251 (I-PAK) (10PTxxF) A A A K G TO-252 (D-PAK) (10PTxxG) K A G K A G TO-220AB (Non-lnsulated) TO-220AB (lnsulated) (10PTxxA) (10PTxxAI) 2(A) 3(G) 1(K) ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing IT(RMS) IT(AV) ITSM I2t TO-251/TO-252/TO-220AB TO-220AB insulated TO-251/TO-252/TO-220AB TO-220AB insulated F =50 Hz F =60 Hz tp = 10 ms TC=100°C TC=90°C TC=100°C TC=90°C t = 20 ms t = 16.7 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current dI/dt IGM F = 60 Hz Tp = 20 µs Tj = 125ºC Tj = 125ºC Maximum gate power Average gate power dissipation Repetitive peak off-state voltage Repetitive peak reverse voltage Storage temperature range PGM PG(AV) VDRM VRR...
Nell Power Semiconductor
