13N60AF Datasheet PDF | Nell Power Semiconductor

Nell Power Semiconductor 13N60AF

13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. They are designed for use in applications such as switched mode power supplies.

Part No.	13N60AF
Datasheet	13N60AF Download
Manufacturer	Nell Power Semiconductor
Description	N-Channel Power MOSFET
Buy	Stock & Price

DESCRIPTION

The Nell threshold voltage of 4 volts. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.

FEATURES

RDS(ON) = 0.26Ω @ VGS = 10V Ultra low gate charge(40nC max.) Low reverse transfer capacitance (CRSS = 3pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (13N60A) GDS TO-220F (13N60AF) D (Drain) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 13 600 0.26 @ VGS = 10V 40 G (Gate) S (Source)

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=4.3A,RGS=50Ω, VGS=10V EAS dv/dt PD Single pulse avalanche energy (Note 2) MOSFET dv/dt ruggedne...