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SEMICONDUCTOR
74.0 (2.91) DIA. Max.
l
1450PT Series RRooHHSS
D TYPE
20
3.5 ( 0.14 ) 47.0 (1.85) DIA. Max. DIA.
27.6 ( 1.09 ) Max.
All dimensions in millimeters ( inches )
Instantaneous on-state voltage , V
Max. On-state dissipation , W
SEMICONDUCTOR
Fig. 1
Peak on-state voltage Vs. Peak on-state Current
3
2.5
2 Tj = 125 C
1.5
1
0.5 100
1000
10000
Instantaneous on-state current , A
Transient thermal impedance , C / W
1450PT Series RRooHHSS
Fig. 2
Max. Junction to heatsink thermal impedance Vs. Time
0.025
0.02
0.015
0.01
0.005
0 0.001
0.01
0.1
Time , S
1
10
3500 3000 2500 2000
Fig. 3 Max. Power Dissipation Vs.