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2SA1386B Datasheet PDF

Nell Power Semiconductor 2SA1386B

Silicon PNP Transistor

Part No. 2SA1386B
Datasheet 2SA1386B Download
Manufacturer
Nell Power Semiconductor
Description Silicon PNP Transistor
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2SA1386B datasheet page 1 preview

FEATURES

Recommend for 105W high Fiderity audio frequency amplifier output stage Complement to type 2SC3519B & 2SC3519B-A 5.45±0.1 B 1.4 C 1 2 3 B

APPLICATIONS

Audio and general purpose E PNP All dimensions in millimeters

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) VALUE SYMBOL VCBO V CEO V EBO I CP (I CM ) IC IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Derate above 25 ° C Junction temperature Storage temperature T C = 25 °C 2SA1386B 2SA1386B-A -160 -160 -5 -30 -15 -4 130 1.04 150 -55 to 150 ºC W W/°C A -180 -180 V UNIT THERMAL CHARACTERISTICS (Ta=25°C unless otherwise specified) SYMBOL Rth(j-a) PARAMETER Maximum thermal resistance, junction to ambient VALUE 1.65 UNIT °C/W P age 1 of 3 SEMICONDUCTOR 2SA1386B Series RoHS RoHS Nell High Power Products

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) SYMBOL V (BR)CEO ICBO I EBO h FE V CE(sat) fT t on t stg tf C OB P...
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